MSD4N70 7 00v n - channel mosfet publication order number: [ msd4 n 7 0 ] ? bruckewell technology corporation rev. a - 2014 description the msd 4 n 7 0 is a n - channel enhancement - mode mosfet , providing the designer with the best combination of fast switching, ruggedized device design, low on - resistance and cost effectiveness. the to - 252 package is universally preferred for all com mercial - industrial applications features ? originative new design ? 100% eas test ? rugged gate oxide technology ? extremely low intrinsic capacitances ? remarkable switching characteristics ? unequalled gate charge: 15 nc (typ.) ? extended safe operating area ? lower rds(on) : 2.5 (typ.) @vgs=10v ? rohs compliant package a pplication ? low power battery chargers ? switch mode power supply (smps) ? dc - ac converters. packing & order information p art no. / t 2,5 00/tape&reel part no. / r 80/tube , 4,000/box graphic symbol maximum ratings and electrical characteristics absolute maximum ratings (tc=25c unless otherwise noted) symbol parameter value unit v ds s drain - source voltage 700 v v gs gate - source voltage 30 v i d continuous drain cu rrent ( tc=25c ) 3.6 a continuous drain current ( t c = 100 c ) 2.3 a
MSD4N70 7 00v n - channel mosfet publication order number: [ msd4 n 7 0 ] ? bruckewell technology corporation rev. a - 2014 absolute maximum ratings (tc=25c unless otherwise noted) symbol parameter value unit i dm pulsed drain current 14.4 a eas single pulsed avalanche energy 240 mj ea r repetitive avalanc he energy 4.4 mj dv/dt peak diode recovery dv/dt 5.5 v/ns p d power dissipation (t c =25c) 55 w - derate above 25c 0.4 w/ c t j ,t stg operating and storage temperature range - 55 to + 150 c t l maximum lead temperature for soldering purposes, 1/8'' from ca se for 5 seconds 300 c ? drain current limited by maximum junction temperature thermal resistance c haracteristics symbol parameter typ. max. units r jc junction - to - case -- 2.5 c /w r ja junction - to - ambient -- 110 on characteristics symbol parameter test conditions min typ. max. unit s v gs gate threshold voltage v ds = v gs , i d = 250a ds(on) static drain - source on - resistance v gs = 10 v , i d = 2.25 a -- 2.2 2.4 off characteristics symbol parameter test conditions min typ. max. unit s b v dss drain - source breakdown voltage v gs = 0 v , i d =250a dss / j breakdown voltage temperature coefficient i d = 250a, reference dss zero gate voltage drain current v ds = 70 0 v , v gs = 0 v v ds = 56 0 v , t c = 125 c -- -- 1 10 a gss f gate - body leakage current, forward v gs = 3 0 v , v d s = 0 v -- -- 100 n a i gssr gate - body leakage current, reverse v gs = - 3 0 v , v d s = 0 v -- -- - 100 n a
MSD4N70 7 00v n - channel mosfet publication order number: [ msd4 n 7 0 ] ? bruckewell technology corporation rev. a - 2014 dynamic characteristics symbol parameter test conditions min typ. max. unit s c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0mhz -- 550 730 pf c oss output capacitance -- 60 80 pf c rss reverse transfer capacitance -- 8 11 pf t d(on) turn - on time v ds = 325 v, i d = 3.6 a, r g = 25 r turn - on time -- 35 70 ns t d(off) turn - off delay time -- 45 90 ns tf turn - off fall time -- 40 80 ns q g total gate charge v ds = 52 0 v,i d = 3.6 a, v gs = 10 v -- 15 20 nc q gs gate - source charge -- 2.8 -- nc q g d gate - drain charge -- 6.0 -- nc source - drain diode maximum ratings and characteristics symbol parameter test conditions min typ. max. unit s i s continuous source - drain diode forward current -- -- 3.6 a i sm pulsed source - drain diode forward current -- -- 16 v sd source - drai n diode forward voltage i s = 4.0 a , v gs = 0 v -- -- 1.5 v t rr reverse recovery time i s = 4.0 a , v gs = 0 v dif/dt = 100a/s rr reverse recovery charge -- 2.2 -- notes; 1. repetitive rating: pulse width limited by maximum junction temperature 2. i as = 4 a, v dd =5 0 v, r g =25 w , starting t j =25 3. i sd Q 4 a, di/dt Q 3 00a/ s,v dd Q bv dss , starting t j =25 4. pulse test: pulse width Q 300 s, duty cycle Q 2% 5. essentially independent of operating temperature
MSD4N70 7 00v n - channel mosfet publication order number: [ msd4 n 7 0 ] ? bruckewell technology corporation rev. a - 2014 characteristics curve fig.1 - on region characteristics fig. 2 - transfer characteristics fig.3 - on resistance variation vs drain current and gate v oltage fig.4 - body diode forward voltage variation with source current and temperature fig.5 - capacitance characteristics fig.6 - gate charge characteristics
MSD4N70 7 00v n - channel mosfet publication order number: [ msd4 n 7 0 ] ? bruckewell technology corporation rev. a - 2014 characteristics curve fig. 7 - breakdown voltage variation vs temperature fig. 8 - on - resista nce variation vs temperature fig. 9 - maximum safe operating area fig. 10 - maximum drain current vs case temperature fig.11 - transient thermal response curve
MSD4N70 7 00v n - channel mosfet publication order number: [ msd4 n 7 0 ] ? bruckewell technology corporation rev. a - 2014 disclaimer all product, product specifications and data are subject to change without notic e to improve reliability, function or design or otherwise. bruckewell technology inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, bruckewell), disclaim any and all liability for any errors, inaccur acies or incompleteness contained in any datasheet or in any other disclosure relating to any product. bruckewell makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing producti on of any product. to the maximum extent permitted by applicable law, bruckewell disclaims (i) any and all liability arising out of the application or use of any product. (ii) any and all liability, including without limitation special, consequential or i ncidental damages. (iii) any and all implied warranties, including warranties of fitness for particular purpose, non - infringement and merchantability. statements regarding the suitability of products for certain types of applications are based on bruckewel ls knowledge of typical requirements that are often placed on bruckewell products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsibility to v alidate that a particular product with the properties described in the product specification is suitable for use in a particular application. parameters provided in datasheets and/or specifications may vary in different applications and performance may var y over time. product specifications do not expand or otherwise modify bruckewells terms and conditions of purchase, including but not limited to the warranty expressed therein.
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